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PCP1405-TD-H

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PCP1405-TD-H

MOSFET N-CH 250V 600MA SOT89

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi PCP1405-TD-H is an N-Channel MOSFET designed for demanding applications. This component features a 250V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 600mA at 25°C. The Rds On is specified at a maximum of 6.5 Ohms with 300mA drain current and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 2.1 nC at 4.5V and input capacitance (Ciss) of 140 pF at 20V. The device supports gate-source voltages up to ±10V and has a threshold voltage (Vgs(th)) of 1.3V at 1mA. With a maximum power dissipation of 3.5W (Tc), it operates efficiently at junction temperatures up to 150°C. The PCP1405-TD-H is housed in a SOT-89/PCP-1 (TO-243AA) package, suitable for surface mounting and supplied on tape and reel. This MOSFET is utilized in power management and general switching applications across various industries including industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Rds On (Max) @ Id, Vgs6.5Ohm @ 300mA, 4.5V
FET Feature-
Power Dissipation (Max)3.5W (Tc)
Vgs(th) (Max) @ Id1.3V @ 1mA
Supplier Device PackageSOT-89/PCP-1
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 20 V

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