PCP1403-TD-H
MOSFET N-CH 60V 4.5A SOT89/PCP-1Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This onsemi N-Channel MOSFET, part number PCP1403-TD-H, offers a 60V drain-source voltage and a continuous drain current of 4.5A at 25°C. Featuring a low on-resistance of 117mOhm at 2A, 10V, this device is constructed using advanced MOSFET technology. The PCP1403-TD-H is housed in a SOT-89/PCP-1 (TO-243AA) surface mount package, suitable for applications requiring efficient power handling up to 3.5W (Tc). Key parameters include a gate charge of 6.7nC (max) at 10V and input capacitance of 310pF (max) at 20V. This component is utilized in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SOT-89/PCP-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 20 V |
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