PCP1402-TD-H
MOSFET N-CH 250V 1.2A SOT89Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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This onsemi N-Channel Power MOSFET, part number PCP1402-TD-H, offers a 250V drain-source voltage and 1.2A continuous drain current at 25°C (Ta). The device features a low Rds(on) of 2.4 Ohm maximum at 600mA, 10V Vgs, and a gate charge of 4.2 nC maximum. With a maximum power dissipation of 3.5W (Tc), it is suitable for applications requiring efficient switching. The PCP1402-TD-H is housed in a TO-243AA (SOT-89/PCP-2) surface mount package and operates up to 150°C (TJ). This component finds application in power supply circuits, motor control, and lighting systems across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | SOT-89/PCP-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 20 V |
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