PCP1302-TD-H
MOSFET P-CH 60V 3A SOT89/PCP-1Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi PCP1302-TD-H is a P-Channel MOSFET designed for surface mount applications within the TO-243AA (SOT-89/PCP-1) package. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) rating of 3A at 25°C (Ta). With a maximum power dissipation of 3.5W (Tc), it is suitable for applications requiring moderate power handling. The Rds On is specified at a maximum of 266mOhm at 1.5A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 6.4 nC at 10V and an Input Capacitance (Ciss) of 262 pF at 20V. The operating temperature range extends to 150°C (TJ). This MOSFET is utilized in various industrial sectors, including automotive and consumer electronics, where efficient power switching is critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 266mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SOT-89/PCP-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 20 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
