NVTR0202PLT1G
MOSFET P-CH 20V 400MA SOT23Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVTR0202PLT1G is a P-channel MOSFET designed for demanding applications. It features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain current (Id) of 400mA at 25°C. With a maximum Power Dissipation (Pd) of 225mW (Ta), this component is suitable for power management and switching tasks. The on-resistance (Rds On) is specified at 800mOhm maximum at 200mA and 10V gate drive. Its SOT-23-3 (TO-236) surface-mount package facilitates compact board designs. The NVTR0202PLT1G is qualified to AEC-Q101 standards, making it appropriate for automotive applications. Key electrical characteristics include a Gate Charge (Qg) of 2.18 nC (max) at 10V and an Input Capacitance (Ciss) of 70 pF (max) at 5V. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 225mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 5 V |
| Qualification | AEC-Q101 |
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