NVTFS6H860NWFTAG
MOSFET N-CH 80V 8A/30A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVTFS6H860NWFTAG N-Channel Power MOSFET, qualified to AEC-Q101 for automotive applications. This device features an 80V Drain-Source Voltage (Vdss) and a continuous drain current capability of 8A at 25°C ambient and 30A at 25°C case temperature. The NVTFS6H860NWFTAG exhibits a maximum On-Resistance (Rds On) of 21.1mOhm at 5A, 10V, with a gate drive voltage of 10V. It boasts low input capacitance (Ciss) of 510pF at 40V and a gate charge (Qg) of 8.7nC at 10V. Designed for surface mounting, this MOSFET is housed in a compact 8-PowerWDFN (3.3x3.3) package and operates across a wide temperature range of -55°C to 175°C (TJ). The maximum power dissipation is 3.1W (Ta) or 46W (Tc). This component is suitable for power management and switching applications in the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 21.1mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 30µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 40 V |
| Qualification | AEC-Q101 |
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