NVTFS5826NLWFTWG
MOSFET N-CH 60V 7.6A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVTFS5826NLWFTWG is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source voltage and a continuous drain current of 7.6A at 25°C ambient. With a maximum on-resistance (Rds On) of 24mOhm at 10A and 10V gate-source voltage, it ensures efficient power transfer. The MOSFET supports a gate drive range from 4.5V to 10V, with a maximum gate charge of 16 nC at 10V. Its low input capacitance (Ciss) is 850 pF at 25V. The NVTFS5826NLWFTWG offers substantial power dissipation capabilities, rated at 3.2W (Ta) and 22W (Tc). Packaged in an 8-PowerWDFN (3.3x3.3) footprint, it is suitable for surface mount configurations. This component is AEC-Q101 qualified and operates across a wide temperature range of -55°C to 175°C (TJ), making it suitable for automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 22W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
| Qualification | AEC-Q101 |
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