NVTFS5826NLWFTAG
MOSFET N-CH 60V 7.6A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVTFS5826NLWFTAG is an N-Channel Power MOSFET designed for demanding automotive applications. This AEC-Q101 qualified component features a 60V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 7.6A at 25°C (Ta). With a maximum Rds(on) of 24mOhm at 10A and 10V, it offers efficient power handling. The device operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 250µA. It boasts a low input capacitance (Ciss) of 850pF at 25V and a gate charge (Qg) of 16nC at 10V. The NVTFS5826NLWFTAG is housed in a 3.3x3.3mm 8-WDFN package, suitable for surface mounting. It supports a wide operating temperature range from -55°C to 175°C (TJ) and provides power dissipation of 3.2W (Ta) and 22W (Tc). This MOSFET is typically utilized in automotive power management systems and electric vehicle components.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 22W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
| Qualification | AEC-Q101 |
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