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NVTFS5824NLTWG

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NVTFS5824NLTWG

MOSFET N-CH 60V 20A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVTFS5824NLTWG is an N-Channel Power MOSFET designed for demanding applications. Featuring a 60 V drain-source voltage and a continuous drain current of 37 A at 25°C (Tc), this device offers low on-resistance of 20.5 mOhm at 10 A, 10 V (Vgs). Its 8-WDFN (3.3x3.3) package with surface mount mounting type provides efficient thermal performance, with a maximum power dissipation of 57 W at 25°C (Tc). Key parameters include a 16 nC gate charge and 850 pF input capacitance. Qualified to AEC-Q101 and rated for an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Rds On (Max) @ Id, Vgs20.5mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 25 V
QualificationAEC-Q101

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