NVTFS5811NLWFTWG
MOSFET N-CH 40V 16A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVTFS5811NLWFTWG is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 40 V drain-source breakdown voltage and supports a continuous drain current of 16 A at 25°C ambient temperature, with a maximum power dissipation of 3.2 W (Ta) or 21 W (Tc). The device offers a low on-resistance (Rds On) of 6.7 mOhm at 20 A and 10 V Vgs, enabled by a 4.5V to 10V drive voltage range. Key parameters include a maximum gate charge (Qg) of 30 nC at 10 V and an input capacitance (Ciss) of 1570 pF at 25 V. Fabricated with advanced MOSFET technology, it is housed in a compact 8-WDFN (3.3x3.3) surface-mount package, supplied on tape and reel. Qualified to AEC-Q101 standards, this MOSFET is suitable for demanding automotive applications. The operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 21W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
| Qualification | AEC-Q101 |
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