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NVTFS5811NLWFTAG

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NVTFS5811NLWFTAG

MOSFET N-CH 40V 16A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVTFS5811NLWFTAG is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a 40V drain-source voltage and a continuous drain current capability of 16A at 25°C ambient temperature. With a maximum Rds(on) of 6.7mOhm at 20A and 10V, it offers efficient power handling. The MOSFET is housed in an 8-WDFN (3.3x3.3) package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 30 nC at 10V and an input capacitance (Ciss) of 1570 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this AEC-Q101 qualified component is engineered for reliability in automotive power management systems. The power dissipation is rated at 3.2W (Ta) and 21W (Tc).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs6.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 25 V
QualificationAEC-Q101

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