NVTFS5811NLTWG
MOSFET N-CH 40V 16A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVTFS5811NLTWG is a 40V N-Channel Power MOSFET designed for demanding applications. This device features a maximum continuous drain current of 16A at 25°C (Ta) and a low on-resistance of 6.7mOhm at 20A, 10V. The 8-WDFN (3.3x3.3) package offers excellent thermal performance with a maximum power dissipation of 3.2W (Ta) and 21W (Tc). Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 1570 pF at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), this AEC-Q101 qualified component is suitable for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 21W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
| Qualification | AEC-Q101 |