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NVTFS5811NLTAG

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NVTFS5811NLTAG

MOSFET N-CH 40V 40A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVTFS5811NLTAG is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C (Ta), with a maximum power dissipation of 3.2W (Ta). Its low on-resistance of 6.7mOhm at 20A and 10V Vgs ensures efficient power transfer. The MOSFET utilizes Metal Oxide technology and is housed in an 8-WDFN (3.3x3.3) package for surface mounting. Key specifications include a gate charge (Qg) of 30nC at 10V and an input capacitance (Ciss) of 1570pF at 25V. Qualified to AEC-Q101 standards, this component is suitable for automotive applications. Operating temperature range is -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs6.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 25 V
QualificationAEC-Q101

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