NVTFS4C25NTAG
MOSFET N-CH 30V 10.1A/22.1A 8DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's NVTFS4C25NTAG is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 30 V drain-source voltage and offers continuous drain current capabilities of 10.1 A at 25°C ambient and 22.1 A at 25°C case temperature. With a low on-resistance of 17 mOhm maximum at 10 A and 10 Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5 V to 10 V, with a gate charge of 10.3 nC maximum at 10 Vgs. Power dissipation is rated at 3 W ambient and 14.3 W case. The NVTFS4C25NTAG is qualified to AEC-Q101 standards and is packaged in a compact 8-WDFN (3.3x3.3) surface-mount configuration. Its robust design makes it suitable for automotive and other high-reliability power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Ta), 22.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 14.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 15 V |
| Qualification | AEC-Q101 |
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