NVTFS4C10NTAG
MOSFET N-CH 30V 15.3A/47A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVTFS4C10NTAG is an N-Channel Power MOSFET designed for high-performance applications. This component features a 30V drain-to-source breakdown voltage and offers a continuous drain current of 15.3A at ambient temperature and 47A at case temperature. With a low on-resistance of 7.4mOhm at 30A and 10V gate drive, it maximizes efficiency. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 19.3 nC. The NVTFS4C10NTAG boasts a maximum power dissipation of 3W (Ta) and 28W (Tc), operating across an extended temperature range of -55°C to 175°C. Its 8-WDFN (3.3x3.3) package facilitates efficient heat dissipation and compact designs. Qualified to AEC-Q101 standards, this MOSFET is suitable for demanding automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.3A (Ta), 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 993 pF @ 15 V |
| Qualification | AEC-Q101 |
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