NVTFS4C08NWFTWG
MOSFET N-CH 30V 17A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVTFS4C08NWFTWG is an N-Channel Power MOSFET designed for demanding applications. This AEC-Q101 qualified component features a 30V drain-source breakdown voltage and a continuous drain current of 17A at 25°C ambient. With a low Rds(on) of 5.9mOhm at 30A and 10V Vgs, it offers efficient power switching. The device supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V. Key parameters include a maximum gate charge of 18.2 nC and an input capacitance of 1113 pF. The NVTFS4C08NWFTWG is housed in an 8-PowerWDFN (3.3x3.3) package for surface mounting, providing 3.1W of power dissipation at ambient temperature and 31W at case temperature. It operates reliably across a temperature range of -55°C to 175°C. This MOSFET is utilized in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1113 pF @ 15 V |
| Qualification | AEC-Q101 |
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