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NVTFS4C08NWFTAG

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NVTFS4C08NWFTAG

MOSFET N-CH 30V 17A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVTFS4C08NWFTAG is a 30V N-Channel Power MOSFET designed for high-efficiency switching applications. This AEC-Q101 qualified component offers a continuous drain current of 17A at 25°C (Ta) and a maximum on-resistance of 5.9mOhm at 30A and 10V gate drive. Featuring low input capacitance (1113pF max at 15V Vds) and a gate charge of 18.2nC max at 10V, it is optimized for fast switching. The device supports a gate-source voltage range of ±20V and operates within a junction temperature range of -55°C to 175°C. Its 8-PowerWDFN (3.3x3.3) package provides excellent thermal performance with a power dissipation of 3.1W (Ta) and 31W (Tc). This MOSFET is suitable for automotive power management and other demanding applications requiring robust performance.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta)
Rds On (Max) @ Id, Vgs5.9mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1113 pF @ 15 V
QualificationAEC-Q101

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