NVTFS4C08NTWG
MOSFET N-CH 30V 17A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVTFS4C08NTWG is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 17A at 25°C (Ta), with a maximum power dissipation of 3.1W (Ta) and 31W (Tc). Optimized for performance, its Rds On is rated at a maximum of 5.9mOhm at 30A and 10V gate drive. The device utilizes Metal Oxide technology and is housed in a compact 8-WDFN (3.3x3.3) package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 18.2 nC at 10V and input capacitance (Ciss) of 1113 pF at 15V. Qualified to AEC-Q101 standards and designated as Automotive grade, this MOSFET is well-suited for demanding automotive and industrial power management systems. It operates across an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1113 pF @ 15 V |
| Qualification | AEC-Q101 |
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