NVTFS4C06NTWG
MOSFET N-CH 30V 21A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVTFS4C06NTWG is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C ambient temperature. Its low on-resistance is specified as 4.2mOhm maximum at 30A and 10V gate-source voltage. The MOSFET is housed in an 8-PowerWDFN package with a 3.3x3.3mm footprint, suitable for surface mounting. Key electrical parameters include a maximum gate charge of 26 nC at 10V and input capacitance of 1683 pF at 15V. Power dissipation is rated at 3.1W (Ta) and 37W (Tc). The NVTFS4C06NTWG meets AEC-Q101 qualification standards and operates across a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1683 pF @ 15 V |
| Qualification | AEC-Q101 |
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