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NVTFS4C06NTAG

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NVTFS4C06NTAG

MOSFET N-CH 30V 21A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVTFS4C06NTAG is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C ambient temperature. With a low on-resistance (Rds On) of 4.2mOhm at 30A and 10V Vgs, it offers efficient power handling. The device is packaged in an 8-PowerWDFN (3.3x3.3) surface mount package and is supplied on tape and reel. Key electrical characteristics include a maximum gate charge of 26 nC at 10V and input capacitance of 1683 pF at 15V. The maximum power dissipation is 3.1W (Ta) and 37W (Tc). This MOSFET meets AEC-Q101 qualification standards, making it suitable for automotive powertrain, chassis control, and body electronics systems. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Ta)
Rds On (Max) @ Id, Vgs4.2mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1683 pF @ 15 V
QualificationAEC-Q101

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