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NVTFS4824NWFTWG

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NVTFS4824NWFTWG

MOSFET N-CH 30V 18.2A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVTFS4824NWFTWG is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 18.2A at 25°C ambient temperature, with a continuous current of 23A specified at 10V gate drive and 4.7mOhm Rds(on). The MOSFET offers low on-resistance, crucial for efficient power switching. Key parameters include a maximum gate charge of 29 nC at 10V, and input capacitance of 1740 pF at 12V. The device operates across an extended temperature range of -55°C to 175°C. Packaged in an 8-WDFN (3.3x3.3) footprint, this AEC-Q101 qualified component is suitable for power management, motor control, and other high-performance automotive systems. Power dissipation is rated at 3.2W (Ta) and 21W (Tc).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18.2A (Ta)
Rds On (Max) @ Id, Vgs4.7mOhm @ 23A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1740 pF @ 12 V
QualificationAEC-Q101

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