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NVTFS4824NTWG

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NVTFS4824NTWG

MOSFET N-CH 30V 18.2A 8WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVTFS4824NTWG is an N-Channel Power MOSFET designed for demanding applications. Featuring a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 18.2A at 25°C (Ta), this component offers a low on-resistance of 4.7mOhm at 23A and 10V gate-source voltage. Its 8-WDFN (3.3x3.3) package facilitates efficient thermal management, with a maximum power dissipation of 3.2W (Ta) and 21W (Tc). The MOSFET supports a gate drive voltage range from 4.5V to 10V, with a maximum gate charge (Qg) of 14 nC at 4.5V, and a gate-source breakdown voltage of ±20V. With an extended operating temperature range of -55°C to 175°C (TJ) and AEC-Q101 qualification, this device is suitable for automotive applications. The NVTFS4824NTWG is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18.2A (Ta)
Rds On (Max) @ Id, Vgs4.7mOhm @ 23A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1740 pF @ 12 V
QualificationAEC-Q101

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