NVTFS4824NTAG
MOSFET N-CH 30V 18.2A 8WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVTFS4824NTAG N-Channel MOSFET, designed for automotive applications. This AEC-Q101 qualified component features a 30V drain-source breakdown voltage and a continuous drain current capability of 18.2A at 25°C ambient temperature. The NVTFS4824NTAG offers a low on-resistance of 4.7mOhm at 23A and 10V gate drive. It is packaged in an 8-WDFN (3.3x3.3) surface-mount configuration, suitable for high-density designs. Key electrical characteristics include a maximum gate charge of 14nC at 4.5V and input capacitance of 1740pF at 12V. The operating temperature range is -55°C to 175°C. This device is well-suited for power management solutions in automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 21W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1740 pF @ 12 V |
| Qualification | AEC-Q101 |