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NVTFS015P03P8ZTAG

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NVTFS015P03P8ZTAG

PT8P PORTFOLIO EXPANSION

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVTFS015P03P8ZTAG is a P-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 30V, this device offers a continuous drain current (Id) of 17A at ambient temperature and up to 88.6A at case temperature. Its low on-resistance (Rds On) is rated at a maximum of 7.5mOhm at 12A and 10V, with a gate drive range from 4.5V to 10V. The MOSFET exhibits a gate charge (Qg) of 105 nC at 10V and input capacitance (Ciss) of 2706 pF at 15V. Power dissipation is 3.2W (Ta) and 88.2W (Tc). This automotive-qualified (AEC-Q101) component is packaged in an 8-WDFN (3.3x3.3) and supplied on tape and reel. It operates across a wide temperature range of -55°C to 175°C. This device is suitable for use in automotive and industrial power management solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-WDFN (3.3x3.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2706 pF @ 15 V
QualificationAEC-Q101

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