NVTFS012P03P8ZTAG
PT8P PORTFOLIO EXPANSIONManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NVTFS012P03P8ZTAG is a P-Channel MOSFET designed for demanding applications. This component features a 30 V drain-source breakdown voltage and supports continuous drain current of 7 A at 25°C. With a low on-resistance of 11.3 mOhm at 10 A and 10 V gate-source voltage, it offers efficient power handling. The device is housed in an 8-WDFN (3.3x3.3) surface mount package, optimized for thermal performance with a maximum power dissipation of 860 mW. Key electrical characteristics include a gate charge of 36 nC at 10 V and input capacitance of 1535 pF at 15 V. The NVTFS012P03P8ZTAG is qualified to AEC-Q101 standards, making it suitable for automotive and industrial applications requiring robust performance. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1535 pF @ 15 V |
| Qualification | AEC-Q101 |
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