NVMS5P02R2G
MOSFET P-CH 20V 3.95A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMS5P02R2G is a P-Channel MOSFET designed for demanding automotive applications. This AEC-Q101 qualified component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.95A at 25°C. The device boasts a low on-resistance (Rds On) of 33mOhm at 5.4A and 4.5V, with a gate charge (Qg) of 35 nC at 4.5V and input capacitance (Ciss) of 1900 pF at 16V. Packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting, it operates efficiently across a temperature range of -55°C to 150°C. This MOSFET is suitable for power management and switching functions in automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.95A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 16 V |
| Qualification | AEC-Q101 |
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