NVMS4816NR2G
MOSFET N-CH 30V 6.8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVMS4816NR2G is an N-Channel MOSFET designed for automotive applications, meeting AEC-Q101 qualification. This component features a Drain to Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 6.8A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 10mOhm at 9A and 10V. Key electrical parameters include a Gate Charge (Qg) of 9.2 nC maximum at 4.5 V and an Input Capacitance (Ciss) of 1060 pF maximum at 25 V. The NVMS4816NR2G is supplied in an 8-SOIC package suitable for surface mounting and is available on tape and reel. This MOSFET is utilized in various automotive systems requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
| Qualification | AEC-Q101 |