NVMFWS003P03P8ZT1G
PFET SO8FL -30V 3MOManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFWS003P03P8ZT1G is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current capability of 35.7A at ambient temperature (Ta) and 234A at case temperature (Tc). The on-resistance (Rds On) is rated at a maximum of 1.8mOhm at 23A and 10V gate drive. With a maximum power dissipation of 3.9W (Ta) and 168.7W (Tc), it is suitable for high-power switching applications. The device utilizes MOSFET technology and is housed in a 5-DFNW (4.9x5.9) package, identified as 8-SOFL-WF, with wettable flank terminals for enhanced solder joint reliability. Key parameters include a gate charge (Qg) of 167 nC at 4.5V and input capacitance (Ciss) of 12120 pF at 15V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly found in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.7A (Ta), 234A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 168.7W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12120 pF @ 15 V |
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