NVMFS6H801NWFT3G
TRENCH 8 80V NFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS6H801NWFT3G is an N-Channel Power MOSFET designed for demanding applications. This device features an 80V Drain-Source Voltage (Vdss) and supports a continuous drain current of 23A at ambient temperature and 157A at case temperature. The low on-resistance of 2.8mOhm at 50A and 10V drive voltage, coupled with a maximum gate charge of 64 nC at 10V, ensures efficient power switching. With a maximum power dissipation of 3.8W (Ta) and 166W (Tc), this MOSFET is suitable for operation between -55°C and 175°C (TJ). The 5-DFNW (4.9x5.9) package with wettable flanks provides excellent thermal performance and ease of automated assembly. Qualified to AEC-Q101 standards and featuring a Trench 8 technology, the NVMFS6H801NWFT3G is utilized in automotive power management systems and other high-reliability electronic designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 157A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 166W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4120 pF @ 40 V |
| Qualification | AEC-Q101 |
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