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NVMFS6B85NLWFT1G

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NVMFS6B85NLWFT1G

MOSFET N-CH 100V 5.6A/19A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS6B85NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and offers a continuous drain current of 5.6A at a typical ambient temperature (Ta) and 19A at a case temperature (Tc). The device boasts a low on-resistance (Rds On) of 46mOhm maximum at 10A and 10V Vgs, with a gate drive voltage range from 4.5V to 10V. With a maximum power dissipation of 3.5W (Ta) and 42W (Tc), and an operating junction temperature range of -55°C to 175°C, it is built for robust performance. The MOSFET is housed in an 8-PowerTDFN, 5-lead package, specifically a 5x6mm 5-DFN (8-SOFL) footprint, supplied on tape and reel. This component is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power management systems. Key electrical characteristics include a maximum gate charge (Qg) of 7.9 nC at 10V Vgs and maximum input capacitance (Ciss) of 480 pF at 25V Vds.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.6A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs46mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 25 V
QualificationAEC-Q101

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