NVMFS6B85NLT1G
MOSFET N-CH 100V 5.6A/19A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMFS6B85NLT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100V and offers a continuous drain current (Id) of 5.6A at ambient temperature (Ta) and 19A at case temperature (Tc). With a maximum power dissipation of 3.5W (Ta) and 42W (Tc), it is suitable for high-power density designs. The MOSFET exhibits a low on-resistance (Rds On) of 46mOhm at 10A and 10V, with a gate threshold voltage (Vgs(th)) of 2.4V at 250µA. Input capacitance (Ciss) is a maximum of 480pF at 25V. The NVMFS6B85NLT1G utilizes advanced MOSFET technology and is housed in a compact 5-DFN (5x6) (8-SOFL) package, ideal for surface mount configurations. It is AEC-Q101 qualified and rated for an operating temperature range of -55°C to 175°C (TJ), making it suitable for automotive and industrial applications. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
| Qualification | AEC-Q101 |