NVMFS6B75NLWFT1G
MOSFET N-CH 100V 7A/28A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMFS6B75NLWFT1G is an N-Channel Power MOSFET designed for automotive applications, meeting AEC-Q101 qualification. This device features a 100V Drain-to-Source voltage (Vdss) and offers a continuous drain current of 7A at ambient temperature (Ta) and 28A at case temperature (Tc). The NVMFS6B75NLWFT1G boasts a maximum power dissipation of 3.5W (Ta) and 56W (Tc), with a low on-resistance (Rds On) of 30mOhm at 10A and 10V. Its gate charge (Qg) is a maximum of 11.3 nC at 10V, and input capacitance (Ciss) is 740 pF at 25V. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±16V and a threshold voltage (Vgs(th)) of 3V at 250µA. This component is housed in an 8-PowerTDFN, 5-lead package with 5-DFN (5x6) (8-SOFL) footprint, suitable for surface mounting. It operates across a temperature range of -55°C to 175°C (TJ). The NVMFS6B75NLWFT1G is utilized in automotive systems, including power management and motor control.
Additional Information
Series: Automotive, AEC-Q101RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 56W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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