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NVMFS6B75NLT1G

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NVMFS6B75NLT1G

MOSFET N-CH 100V 7A/28A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS6B75NLT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100 V and offers a continuous drain current of 7A at typical ambient temperature (Ta) and 28A at case temperature (Tc). With a maximum power dissipation of 3.5W (Ta) and 56W (Tc), it utilizes MOSFET technology and is housed in a 5-DFN (5x6) 8-SOFL package for surface mounting. Key electrical characteristics include a low Rds On of 30mOhm at 10A, 10V, and a gate charge (Qg) of 11.3 nC at 10V. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is AEC-Q101 qualified, making it suitable for automotive industry applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs30mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 25 V
QualificationAEC-Q101

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