NVMFS6B25NLWFT1G
MOSFET N-CH 100V 8A/33A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVMFS6B25NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 8A (ambient) to 33A (ambient), with a case temperature rating reflecting a higher thermal performance. The device offers a low Rds(on) of 24mOhm at 20A and 10V Vgs, achieved with a 4.5V to 10V drive voltage range. Key parameters include a maximum gate charge of 13.5 nC at 10V and input capacitance of 905 pF at 25V. With a maximum power dissipation of 3.6W (ambient) and 62W (case), it is suitable for high-power density designs. The MOSFET is housed in a 5-DFN (5x6) package, also identified as 8-PowerTDFN, 5 leads, and supplied on tape and reel. Qualified to AEC-Q101, the NVMFS6B25NLWFT1G is utilized in automotive and industrial sectors. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 33A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 62W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 905 pF @ 25 V |
| Qualification | AEC-Q101 |