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NVMFS6B14NWFT1G

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NVMFS6B14NWFT1G

MOSFET N-CH 100V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS6B14NWFT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 55A at 25°C (Tc). The Rds(On) is specified at a maximum of 15mOhm when driven at 20A and 10V. With a maximum gate charge (Qg) of 20 nC at 10V, it offers efficient switching characteristics. This MOSFET is manufactured using advanced MOSFET technology and is qualified to AEC-Q101 standards, making it suitable for automotive applications. It is packaged in a 5-DFN (5x6) (8-SOFL) package for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). The power dissipation capabilities are 3.8W (Ta) and 94W (Tc).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 50 V
QualificationAEC-Q101

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