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NVMFS6B14NT3G

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NVMFS6B14NT3G

MOSFET N-CH 100V 15A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS6B14NT3G is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 100V, it offers a continuous drain current of 55A at 25°C (Tc) and a low on-resistance (Rds On) of 15mOhm at 20A and 10V. This device supports a gate drive voltage up to 10V and has a gate charge (Qg) of 20 nC at 10V. With a maximum power dissipation of 3.8W (Ta) and 94W (Tc), it is suitable for high-power switching and power management solutions. The MOSFET is housed in an 8-PowerTDFN, 5-Lead (5x6) package for efficient thermal performance and surface mounting. Qualifying for AEC-Q101, this component is engineered for automotive applications, including electric vehicle powertrains, battery management systems, and advanced driver-assistance systems (ADAS). The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 50 V
QualificationAEC-Q101

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