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NVMFS6B14NLWFT1G

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NVMFS6B14NLWFT1G

MOSFET N-CH 100V 11A/55A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS6B14NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100 V and offers a continuous drain current (Id) of 11 A at 25°C ambient temperature, scaling to 55 A at 25°C case temperature. With a low on-resistance (Rds On) of 13 mOhm at 20 A and 10 Vgs, it minimizes conduction losses. The MOSFET supports drive voltages from 4.5 V to 10 V and has a maximum gate charge of 8 nC at 4.5 V. It is qualified to AEC-Q101 standards and suitable for automotive applications. The power dissipation is rated at 3.8 W ambient and 94 W case. Encased in a 5-DFN (5x6) package, this component is supplied on tape and reel, operating across a temperature range of -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 25 V
QualificationAEC-Q101

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