NVMFS6B14NLT3G
MOSFET N-CH 100V 11A/55A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS6B14NLT3G is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 100 V and offers a continuous drain current (Id) of 11 A at ambient temperature and 55 A at case temperature. Its low on-resistance (Rds On) is specified at 13 mOhm maximum at 20 A and 10 V Vgs. The device exhibits a gate charge (Qg) of 8 nC maximum at 4.5 V Vgs and input capacitance (Ciss) of 1680 pF maximum at 25 V Vds.
The NVMFS6B14NLT3G operates with a maximum gate-source voltage (Vgs) of ±16 V and a threshold voltage (Vgs(th)) of 3 V maximum at 250 µA. Maximum power dissipation is 3.8 W (Ta) and 94 W (Tc). This MOSFET is housed in a 5-DFN (5x6) (8-SOFL) package, a surface mount type, and is supplied on tape and reel. It is qualified to AEC-Q101 and is suitable for automotive applications. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |
| Qualification | AEC-Q101 |