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NVMFS6B14NLT1G

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NVMFS6B14NLT1G

MOSFET N-CH 100V 11A/55A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS6B14NLT1G is an N-Channel Power MOSFET, AEC-Q101 qualified for automotive applications. This device features a drain-source voltage (Vdss) of 100V and offers continuous drain current ratings of 11A at ambient temperature (Ta) and 55A at case temperature (Tc). The low on-resistance (Rds On) is 13mOhm maximum at 20A and 10V Vgs. With a maximum power dissipation of 3.8W (Ta) and 94W (Tc), it is designed for efficient power management. The MOSFET is supplied in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mount applications. Key parameters include a gate charge (Qg) of 8nC at 4.5V Vgs and input capacitance (Ciss) of 1680pF at 25V Vds. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 25 V
QualificationAEC-Q101

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