NVMFS6B05NWFT1G
MOSFET N-CH 100V 104A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS6B05NWFT1G is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 114A at 25°C (Tc), with a maximum power dissipation of 165W (Tc). The Rds(On) is specified at a low 8mOhm at 20A and 10V gate drive. Key characteristics include a gate charge (Qg) of 44 nC at 10V, input capacitance (Ciss) of 3100 pF at 25V, and a maximum gate-source voltage (Vgs) of ±16V. The device operates within an extended temperature range of -55°C to 175°C (TJ). Packaged in a compact 5-DFN (5x6) (8-SOFL) surface mount configuration, it is supplied on tape and reel. Qualified to AEC-Q101 standards, this MOSFET is suitable for automotive and other high-reliability power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 114A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 165W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
| Qualification | AEC-Q101 |