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NVMFS6B05NWFT1G

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NVMFS6B05NWFT1G

MOSFET N-CH 100V 104A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS6B05NWFT1G is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 114A at 25°C (Tc), with a maximum power dissipation of 165W (Tc). The Rds(On) is specified at a low 8mOhm at 20A and 10V gate drive. Key characteristics include a gate charge (Qg) of 44 nC at 10V, input capacitance (Ciss) of 3100 pF at 25V, and a maximum gate-source voltage (Vgs) of ±16V. The device operates within an extended temperature range of -55°C to 175°C (TJ). Packaged in a compact 5-DFN (5x6) (8-SOFL) surface mount configuration, it is supplied on tape and reel. Qualified to AEC-Q101 standards, this MOSFET is suitable for automotive and other high-reliability power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C114A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 25 V
QualificationAEC-Q101

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