NVMFS6B05NT1G
MOSFET N-CH 100V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS6B05NT1G is an N-Channel Power MOSFET designed for high-performance applications. It features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 114A (Tc). With a low on-resistance of 8mOhm @ 20A, 10V, this MOSFET minimizes conduction losses. The device offers a maximum power dissipation of 165W (Tc) and 3.8W (Ta), with a junction temperature range of -55°C to 175°C.
The NVMFS6B05NT1G is housed in an 8-PowerTDFN, 5-lead package, specifically a 5x6mm 5-DFN (8-SOFL) footprint, suitable for surface mounting. Key parameters include a gate charge (Qg) of 44 nC @ 10V and input capacitance (Ciss) of 3100 pF @ 25V. This component is AEC-Q101 qualified, making it suitable for automotive applications. The technology employed is MOSFET (Metal Oxide).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 114A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 165W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
| Qualification | AEC-Q101 |
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