NVMFS6B05NLT3G
MOSFET N-CH 100V 17A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS6B05NLT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 114A at 25°C (Tc). Its low on-resistance is rated at a maximum of 5.6mOhm at 20A, 10V, with a gate drive range of 4.5V to 10V. The device boasts a maximum gate charge (Qg) of 6.8 nC at 10V and input capacitance (Ciss) of 3980 pF at 25V.
With a power dissipation of 165W at a case temperature and 3.8W at ambient temperature, the NVMFS6B05NLT3G is suitable for high-power switching. It operates within a temperature range of -55°C to 175°C (TJ). The component is housed in a 5-DFN (5x6) package, specifically an 8-PowerTDFN with 5 leads, supplied on a Tape & Reel. Qualified to AEC-Q101 standards and carrying an Automotive grade, this MOSFET is engineered for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 114A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 165W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 25 V |
| Qualification | AEC-Q101 |
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