NVMFS6B05NLT1G
MOSFET N-CH 100V 17A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS6B05NLT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 114 A at 25°C (Tc). With a low Rds(on) of 5.6 mOhm at 20 A and 10 V, it offers efficient power handling. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 6.8 nC at 10V. Its 5-DFN (5x6) package, also known as 8-PowerTDFN with 5 leads, is suitable for surface mounting. Maximum power dissipation is rated at 3.8 W (Ta) and 165 W (Tc). Qualified to AEC-Q101, this MOSFET is built for automotive environments, finding utility in power management, electric vehicles, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 114A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 165W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 25 V |
| Qualification | AEC-Q101 |
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