NVMFS6B03NWFT1G
MOSFET N-CH 100V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel Power MOSFET, part number NVMFS6B03NWFT1G. This AEC-Q101 qualified device features a 100 V drain-source voltage and a continuous drain current of 145 A (Tc) at 25°C. The 4.8 mOhm maximum Rds On at 20 A and 10 V gate drive voltage, coupled with a 58 nC maximum gate charge, ensures efficient switching performance. Designed for surface mounting in an 8-PowerTDFN, 5-DFN (5x6) package, this MOSFET offers robust power dissipation capabilities, rated at 3.9 W (Ta) and 198 W (Tc). The operating temperature range is -55°C to 175°C (TJ). This component is suitable for demanding automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 145A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 198W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 50 V |
| Qualification | AEC-Q101 |