NVMFS6B03NLT3G
MOSFET N-CH 100V 20A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS6B03NLT3G is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 145A at 25°C (Tc), this component offers robust power handling. The MOSFET exhibits a low on-resistance (Rds On) of 4mOhm at 20A and 10V Vgs, contributing to efficient power conversion. Its 5x6 (8-SOFL) 5-DFN package with surface mount capability ensures compact integration. This AEC-Q101 qualified device is suitable for automotive applications, including power management systems and electric vehicle components. The operating temperature range of -55°C to 175°C (TJ) and a maximum power dissipation of 198W (Tc) underscore its reliability in harsh environments. Key electrical parameters include a gate charge of 9.4 nC at 10V and input capacitance of 5320 pF at 25V.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 145A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 198W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5320 pF @ 25 V |
| Qualification | AEC-Q101 |
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