NVMFS6B03NLT1G
MOSFET N-CH 100V 20A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMFS6B03NLT1G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 145A at 25°C (Tc). The Rds(On) is specified at a maximum of 4mOhm at 20A and 10V gate drive. It offers low gate charge (Qg) of 9.4 nC at 10V, contributing to reduced switching losses. Power dissipation is rated at 3.9W (Ta) and 198W (Tc).
The NVMFS6B03NLT1G utilizes advanced MOSFET technology and is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. It operates within a temperature range of -55°C to 175°C (TJ). This device is AEC-Q101 qualified, making it suitable for automotive applications. Key electrical characteristics include input capacitance (Ciss) of 5320 pF at 25V and a maximum gate-source voltage (Vgs) of ±16V. The threshold voltage (Vgs(th)) is 3V at 250µA. The NVMFS6B03NLT1G is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 145A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 198W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5320 pF @ 25 V |
| Qualification | AEC-Q101 |
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