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NVMFS5H615NLWFT1G

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NVMFS5H615NLWFT1G

MOSFET

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5H615NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. This component offers a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 31 A at 25°C (Ta). Featuring a low on-resistance of 1.8 mOhm at 49 A and 10 V (Vgs), it minimizes conduction losses. The device boasts a maximum power dissipation of 3.9 W (Ta) and operates across a wide temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 63 nC at 10 V and input capacitance (Ciss) of 4860 pF at 30 V (Vds). It is qualified to AEC-Q101 standards, indicating suitability for automotive applications. The NVMFS5H615NLWFT1G is supplied in a wettable flank 5-DFN (5x6) package, also known as 8-PowerTDFN, 5 Leads, facilitating robust surface mounting.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Ta)
Rds On (Max) @ Id, Vgs1.8mOhm @ 49A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4860 pF @ 30 V
QualificationAEC-Q101

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