NVMFS5C682NLWFT3G
MOSFET N-CH 60V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C682NLWFT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 25A (Tc) at 25°C. With a low Rds(on) of 21mOhm at 10A and 10V, it offers efficient power handling. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V and a gate threshold voltage (Vgs(th)) of 2V at 16µA. Input capacitance (Ciss) is a maximum of 410 pF at 25V, and gate charge (Qg) is 5 nC at 10V. Power dissipation is rated at 3.5W (Ta) and 28W (Tc). The NVMFS5C682NLWFT3G is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) and is supplied on tape and reel. Its Automotive grade and AEC-Q101 qualification make it suitable for automotive electronics and industrial power management systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 16µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
| Qualification | AEC-Q101 |
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