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NVMFS5C682NLT3G

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NVMFS5C682NLT3G

MOSFET N-CH 60V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C682NLT3G is a 60 V N-Channel Power MOSFET designed for demanding applications. This device features a low Rds(on) of 21 mOhm at 10A and 10V Vgs, with a continuous drain current capability of 25A (Tc). With a maximum gate charge of 5 nC at 10 V, it offers efficient switching characteristics. The MOSFET is housed in an 8-PowerTDFN, 5-Lead (5x6) package, suitable for surface mount assembly. It operates across a wide temperature range of -55°C to 175°C (TJ) and is AEC-Q101 qualified, making it suitable for automotive and industrial environments. Key electrical parameters include a drain-to-source voltage (Vdss) of 60 V and a maximum power dissipation of 28W (Tc).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs21mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id2V @ 16µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds410 pF @ 25 V
QualificationAEC-Q101

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