NVMFS5C682NLT1G
MOSFET N-CH 60V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C682NLT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current capability of 25 A (Tc). With a maximum Rds(On) of 21 mOhm at 10 A and 10 V Vgs, it ensures efficient power transfer. The device is qualified to AEC-Q101 standards and operates across a wide temperature range of -55°C to 175°C (TJ). Its 5-DFN (5x6) (8-SOFL) package with surface mount mounting type, supplied on tape and reel, makes it suitable for high-volume manufacturing. Key electrical characteristics include a gate charge (Qg) of 5 nC at 10 V and input capacitance (Ciss) of 410 pF at 25 V. The power dissipation is rated at 3.5 W (Ta) and 28 W (Tc). This MOSFET is commonly utilized in automotive power management and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 16µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
| Qualification | AEC-Q101 |
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